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Tight Binding and Density Functional Theory of Tailoring Electronic Properties in Al1−xInxN/AlN/GaN High Electron Mobility Transistors (HEMTs)

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dc.contributor.authorAbdelhakim, Meziani
dc.contributor.authorAllouche, Abdul-Rahman
dc.contributor.authorAzzedine, Telia
dc.contributor.authorUnlu, Hilmi
dc.contributor.ituauthorÜnlü, Hilmi
dc.date.accessioned2026-01-29T04:37:32Z
dc.date.issued2022-01-01
dc.description.urihttps://doi.org/10.1007/978-3-030-93460-6_24
dc.description.urihttps://hal.science/hal-04267855v1
dc.identifier.doi10.1007/978-3-030-93460-6_24
dc.identifier.openairedoi_dedup___::8829b2dc223fd133ab93be62a317b49e
dc.identifier.orcid0000-0003-0725-4057
dc.identifier.orcid0000-0002-5083-0040
dc.identifier.urihttps://hdl.handle.net/11527/67765
dc.language.isoeng
dc.publisherSpringer International Publishing
dc.rightsCLOSED
dc.subject[PHYS] Physics [physics]
dc.titleTight Binding and Density Functional Theory of Tailoring Electronic Properties in Al1−xInxN/AlN/GaN High Electron Mobility Transistors (HEMTs)
dc.typeBook Part
dspace.entity.typePublication
person.identifier.orcid0000-0002-5083-0040

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