Design of 1.575GHz single ended cmos lna for gps applications
Design of 1.575GHz single ended cmos lna for gps applications
Dosyalar
Tarih
2002
Yazarlar
Uslu, Onur
Süreli Yayın başlığı
Süreli Yayın ISSN
Cilt Başlığı
Yayınevi
Institute of Science and Technology
Özet
Geçen on yılda telsiz haberleşme teknolojisine artan talep birçok yüksek frekans tümleşik tasarım yapılmasına yol açtı. CMOS prosesi ölçeklenebilirliği ve maliyeti sayesinde tasarımcılar arasında gözde bir konuma geldi. Bu tezde MOSFET gürültü mekanizmalari incelendi ve BSIM3 MOSFET modelini çekirdek alan yeni bir RF MOSFET modeli oluşturuldu. Bu model ek olarak geçit gürültüsünü, taban ve geçit parazitiklerini içerir. LNA mimarileri incelendikten sonra, en çok kullanılan ve en uygun topoloji olan endüktif kaynak dejenerasyonu ayrıntılı bir şekilde anlatılmıştır. Bu topoloji için gürültü katsayısı denklemleri verilmiştir. Gürültü denklemlerinden devrenin gürültü katsayısının iyileştirilmesi için gerekli metod türetilmiştir. Simülasyon sonuçları ile teorik sonuçlar birbirine yakın benzerlik göstermektedir. GPS uygulamaları için 1.575GHz düşük gürültülü kuvvetlendirici tasarlanmiştir. Tasarımda TSMC 0.25u.m teknolojisi kullanıldı. Gürültü katsayısı 1.35dB olarak elde edildi. Kazanç 16bB olarak bulundu. Düşük gürültülü kuvvetlendirici 2.5V gerilim kaynağından beslendi ve güç tüketimi 19mW olarak bulundu.
Increasing market interest to the wireless applications leads the manufacturers to implement more reliable and cheaper products. The advent of cellular telephones start the rapid development in the wireless technology. Then cordless phones whiped the innovation. More recently Global Positioning System provided new challenges for the designers. Wireless products are huge systems. The most problematic and the important part of the designs is the front end of the receivers. Especially reliable and accurate signal transfer is depend on how best the LNA block of the receivers is designed. Recent searches have used BiCMOS, GaAs, GaAs HBT technologies for designing RF front ends [1-3]. These technologies present low noise,high gain and low power consumbtion. As CMOS process enables the designs to have higher speeds, a lot of effort is focused on CMOS process and resulted CMOS RF front end and LNA at multi-GigaHertz [3-12]. The common advantages of the CMOS technology are the scability and cost. Furthermore the integration of complete communication systems lead the CMOS technology become a must. Applications like GPS, performs digital signal processings leads to mixed signal chips. When implementing the LNA in CMOS process, the main problem encountered in the design is noise modelling of MOS devices. Mos devices are not modelled very well at high frequencies in BSIM model series, although the noise equations of MOS devices are given briefly in early 1960 [13]. Increasing using of CMOS process at RF frequencies, force the engineers to model and simulate MOS devices at high frequencies acurately [14-18]. Finally as a response to these modelling efforts, BSIM4 is announced [19-20]. Since the companies have built up their models that they fit the measured results to the device models, BSIM4 is not common yet. So it is hard to find a rewised process parameters for BSIM4.
Increasing market interest to the wireless applications leads the manufacturers to implement more reliable and cheaper products. The advent of cellular telephones start the rapid development in the wireless technology. Then cordless phones whiped the innovation. More recently Global Positioning System provided new challenges for the designers. Wireless products are huge systems. The most problematic and the important part of the designs is the front end of the receivers. Especially reliable and accurate signal transfer is depend on how best the LNA block of the receivers is designed. Recent searches have used BiCMOS, GaAs, GaAs HBT technologies for designing RF front ends [1-3]. These technologies present low noise,high gain and low power consumbtion. As CMOS process enables the designs to have higher speeds, a lot of effort is focused on CMOS process and resulted CMOS RF front end and LNA at multi-GigaHertz [3-12]. The common advantages of the CMOS technology are the scability and cost. Furthermore the integration of complete communication systems lead the CMOS technology become a must. Applications like GPS, performs digital signal processings leads to mixed signal chips. When implementing the LNA in CMOS process, the main problem encountered in the design is noise modelling of MOS devices. Mos devices are not modelled very well at high frequencies in BSIM model series, although the noise equations of MOS devices are given briefly in early 1960 [13]. Increasing using of CMOS process at RF frequencies, force the engineers to model and simulate MOS devices at high frequencies acurately [14-18]. Finally as a response to these modelling efforts, BSIM4 is announced [19-20]. Since the companies have built up their models that they fit the measured results to the device models, BSIM4 is not common yet. So it is hard to find a rewised process parameters for BSIM4.
Açıklama
Thesis (M.Sc.) -- İstanbul Technical University, Institute of Science and Technology, 2002
Anahtar kelimeler
CMOS,
Düşük gürültülü yükselteç,
GPS,
Kablosuz iletişim,
Tasarım,
CMOS,
Low noise amplifier,
Global Positioning System,
Wireless communication,
Design