Sensing Schemes for STT-MRAMs structured with high TMR in low RA MTJs
Sensing Schemes for STT-MRAMs structured with high TMR in low RA MTJs
Tarih
2019
Yazarlar
Atasoyu, Mesut
Altun, Mustafa
Ozoguz, Serdar
Süreli Yayın başlığı
Süreli Yayın ISSN
Cilt Başlığı
Yayınevi
Elsevier
Özet
In this work, we investigated the sensing challenges of spin-transfer torque MRAMs structured with perpendicular
magnetic tunnel junctions with a high tunneling magnetoresistance ratio in a low resistance-area product. To overcome
the problems of reading this type of memory, we have proposed a voltage sensing amplifier topology and compared its
performance to that of the current sensing amplifier in terms of power, speed, and bit error rate performance. We have
verified that the proposed sensing scheme offers a substantial improvement in bit-error-rate performance. To enumerate
the read operations of the proposed sensing scheme with the proposed cross-coupled capacitive feedback technique on
the clamped circuity have successfully been performed a 2.5X reduction in average low power and a 13X increase in
average reading speed compared with the previous works due to its device structure and the proposed circuit technique.
Açıklama
Anahtar kelimeler
PMA,
MTJ,
STT-MRAM,
Sensing,
BER,
Low-power,
High-speed
Alıntı
M. Atasoyu, M. Altun, S. Ozoguz, Sensing schemes for STT-MRAMsstructured with high TMR in low RA MTJs, Microelectronics Journal (2019), doi: https://doi.org/10.1016/j.mejo.2019.05.008.