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0.1 – 10 GHz 0.5W high efficiency single transistor GaAs pHEMT power amplifier design using load-pull simulations

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dc.contributor.authorSayginer, Mustafa
dc.contributor.authorYazgi, Metin
dc.contributor.authorKuntman, Hakan
dc.date.accessioned2026-01-25T01:47:46Z
dc.date.issued2011-04-01
dc.description.urihttps://doi.org/10.1109/siu.2011.5929782
dc.identifier.doi10.1109/siu.2011.5929782
dc.identifier.endpage844
dc.identifier.openairedoi_dedup___::46809e375c88553f318d7fe1a9a4444f
dc.identifier.startpage841
dc.identifier.urihttps://hdl.handle.net/11527/41828
dc.publisherIEEE
dc.relation.ispartof2011 IEEE 19th Signal Processing and Communications Applications Conference (SIU)
dc.sdg.typeGoal 7: Affordable and Clean Energy
dc.title0.1 – 10 GHz 0.5W high efficiency single transistor GaAs pHEMT power amplifier design using load-pull simulations
dc.typeArticle
dspace.entity.typePublication

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