Yayın:
Broadband Power Amplifier Design via Fictitious Matching

dc.contributor.authorKilinc, Sedat
dc.contributor.authorSiddik Yarman, B.
dc.contributor.authorÖzoguz, Serdar
dc.contributor.ituauthorÖzoğuz, İsmail Serdar
dc.date.accessioned2026-01-24T14:29:07Z
dc.date.issued2022-12-01
dc.description.abstractIn this paper, we introduce a new matching concept, so called Fictitious Matching (FM), which may be defined between the artificially generated non-Foster passive immittances, namely KGF and KLF, over a lossless two-port or equivalently equalizer E. These immittances may not necessarily belong to physical devices, rather, they are fabricated like a source-pull or load-pull impedances to maximize the gain, the output power, the efficiency, and to minimize the output harmonics of a nonlinear-active device. In FM problems, E is constructed to optimize the power transfer from KGF to KLF in the passband. In this regard, E is described by means of its back end driving point input immittance K(λ) in Darlington sense, and it is determined as the outcome of the optimization process, where the complex variable λ=Σ+jΩ refers to Richards variable. Synthesis of K(λ) results in E, consists of commensurate transmission lines. It is demonstrated that the new concept of FM can be utilized to build broadband power amplifiers. In this work, solving FM problem successively, the input and the output matching networks of a power amplifier are designed over 500 MHz-3 GHz with the average gain of 11.5dB, the output power of 40.5dBm, and the average drain efficiency of 61.7%. The Power Amplifier was manufactured with microstrip lines using Wolfspeed’s CGH40010F GaN transistor. IEEE
dc.description.urihttps://doi.org/10.1109/tcsii.2022.3207423
dc.description.urihttps://doi.org/10.1109/TCSII.2022.3207423
dc.description.urihttps://hdl.handle.net/20.500.12831/9270
dc.identifier.doi10.1109/tcsii.2022.3207423
dc.identifier.eissn1558-3791
dc.identifier.endpage4848
dc.identifier.issn1549-7747
dc.identifier.openairedoi_dedup___::04983c351c57f6eeefd9b5419e45f812
dc.identifier.orcid0000-0002-2607-6594
dc.identifier.orcid0000-0003-1562-5524
dc.identifier.orcid0000-0002-0915-1804
dc.identifier.startpage4844
dc.identifier.urihttps://hdl.handle.net/11527/33287
dc.identifier.volume69
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.ispartofIEEE Transactions on Circuits and Systems II: Express Briefs
dc.rightsCLOSED
dc.subjectIII-V semiconductors
dc.subjectBroadband Matching
dc.subjectLoad pull
dc.subjectEfficiency
dc.subjectMicrostrip
dc.subjectNatural frequencies
dc.subjectMicrostrip-line
dc.subjectCommensurate transmission line
dc.subjectFrequency modulation
dc.subjectRichard variable
dc.subjectSource pull impedance
dc.subjectMicrostrip Lines
dc.subjectRichards Synthesis
dc.subjectImpedance matchings
dc.subjectImpedance matching
dc.subjectReal Frequency Techniques
dc.subjectTransmission-line
dc.subjectReal frequency technique
dc.subjectSource Pull Impedance
dc.subjectBroadband amplifiers
dc.subjectPassband
dc.subjectPower amplifiers
dc.subjectLoad pull impedance
dc.subjectPass bands
dc.subjectImpedance
dc.subjectGallium nitride
dc.subjectGaN Power Amplifiers
dc.subjectBroad band matching
dc.subjectCommensurate Transmission Lines
dc.subjectElectric lines
dc.subjectMicro-strips
dc.subjectParametric approach
dc.subjectEnergy transfer
dc.subjectRichards Variable
dc.subjectMicrostrip lines
dc.subjectPower transmission lines
dc.subjectParametric Approach
dc.subjectRichard synthesis
dc.subjectGaN power amplifier
dc.subjectSource-pull
dc.subjectLoad Pull Impedance
dc.titleBroadband Power Amplifier Design via Fictitious Matching
dc.typeArticle
dspace.entity.typePublication
person.identifier.orcid0000-0002-0915-1804

Dosyalar

Koleksiyonlar