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Modelling of bandgap and band offset properties in III-N related heterostructures

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dc.contributor.authorAkinci, O.
dc.contributor.authorGurel, Hi̇kmet Hakan
dc.contributor.authorUnlu, H.
dc.contributor.ituauthorÜnlü, Hilmi
dc.date.accessioned2026-01-26T02:08:37Z
dc.date.issued2004-10-01
dc.description.abstractAbstract Reliable and precise knowledge about the strain and composition effects on the electronic properties is crucial for the optimization of III-nitride based heterostructures for electronic and optoelectronic device applications. Using the nearest neighbor sp 3 s ∗ semi-empirical tight binding formalism, we investigated the composition effects on bandgaps and offsets in pseudomorphic InGaN/GaN and GaAsN/GaAs heterostructures with zinc-blende structures. The strain effects are incorporated afterwards in a semi-empirical way. The model should be useful in understanding the effects of composition and strain on heterostructure energy band properties.
dc.description.urihttps://doi.org/10.1016/j.spmi.2004.09.049
dc.description.urihttps://dx.doi.org/10.1016/j.spmi.2004.09.049
dc.description.urihttps://avesis.kocaeli.edu.tr/publication/details/56363125-6b9a-4b22-a474-5f2b058d04ac/oai
dc.identifier.doi10.1016/j.spmi.2004.09.049
dc.identifier.endpage692
dc.identifier.issn0749-6036
dc.identifier.openairedoi_dedup___::c237772c2ce3405d11703d8600404ac1
dc.identifier.orcid0000-0002-5083-0040
dc.identifier.startpage685
dc.identifier.urihttps://hdl.handle.net/11527/56958
dc.identifier.volume36
dc.language.isoeng
dc.publisherElsevier BV
dc.relation.ispartofSuperlattices and Microstructures
dc.rightsCLOSED
dc.sdg.typeGoal 7: Affordable and Clean Energy
dc.titleModelling of bandgap and band offset properties in III-N related heterostructures
dc.typeArticle
dspace.entity.typePublication
person.identifier.orcid0000-0002-5083-0040

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