Electrical characterization of the boron trifluoride doped poly(3‐aminoacetophenone)/p‐Si junction

Abstract

Abstract Electrical and interface state properties of the borontrifluoride doped poly(3‐aminoacetophenone)/p‐Si junction have been investigated by current‐voltage and impedance spectroscopy methods. Al/p‐Si/P 3 APBF 3 /Aldiode indicates a nonideal behavior with electrical parameters ( n = 3.53, ϕ B = 0.82 eV, and R s = 1.48 kΩ), which result from the interfacial layer, series resistance, and resistance of the organic semiconductor. The obtained barrier height value of the Al/p‐Si/P 3 APBF 3 /Aldiode is higher than that of the conventional Al/p‐Si (ϕ B = 0.58 eV) Schottky diode. The interface state density of the diode was of the order of 1.05× 10 12 eV −1 cm −2 . It is evaluated that the barrier height and interface state density values of the diode are modified using the boron trifluoride doped poly (3‐aminoacetophenone) organic semiconductor. POLYM. ENG. SCI., 2010. © 2009 Society of Plastics Engineers