Transient simulation of heterojunction photodiodes-part I: computational methods

Abstract

A novel approach is presented for incorporating the transient solution of one-dimensional semiconductor drift-diffusion equations within a general circuit simulation tool. This approach allows simple representation of localized carrier transport models of simulated devices through equivalent circuit elements such as voltage controlled current sources and capacitors. It also lends itself to mixed-mode transient simulation of devices and circuits. The utility of the new simulation approach in state-of-the-art device design is demonstrated by the transient response analysis of a GaAs heterojunction p-i-n photodiode, and by the time-domain analysis of an integrated photoreceiver circuit. >