LEE- Enerji Bilim ve Teknoloji-Doktora
Bu koleksiyon için kalıcı URI
Gözat
Konu "electrical energy" ile LEE- Enerji Bilim ve Teknoloji-Doktora'a göz atma
Sayfa başına sonuç
Sıralama Seçenekleri
-
ÖgeThe use of doped ZnO nanomaterials with enhanced optoelectronic properties as an electrode(Graduate School, 2021-01-15) Ürper, Osman ; Baydoğan, Nilgün ; 301152002 ; Energy Science and Technology ; Enerji Bilim ve TeknolojiIn this thesis, the structural characteristics of ZnO:Al thin film have been modified for its improvement of optical parameters and electrical properties to applying in optoelectronic devices. ZnO:Al thin film has presented optimum properties for optoelectronic applications such as photovoltaic solar cells, transparent conductors, semiconductor heterojunctions due to the improvement of its optical model and energy band gap. The optical parameters have been improved with Al concentration to exploit ZnO:Al thin film due to the enhancement of electronic properties as semiconductor materials in diode technology. The refractive index and extinction coefficient were changed slightly due to the increase of Al concentration. The examinations of extinction coefficient (k) and refractive index (n) have presented the importance to use this cost-effective thin film in the semiconductor devices. For this purpose, the main objective of this research to focuses on investigation structural, optical, and electrical properties of ZnO thin films as a transparent layer for thin films. This research focused on three interrelated topics in this dissertation; i) different Al doping concentration, ii) pre-post annealing temperature, and iii) various annealing ambient showed important impact on structural, optical, and electrical properties of ZnO metal oxides. Pure and Al-doped ZnO thin films were deposited on the glass substrates by sol-gel dip and spin coating techniques. During the study, the influence of the techniques compared on the ZnO:Al films structural and optoelectronic features. The films were prepared by dip coating technique provided lower sheet resistivity and higher surface roughness. Due to the better optoelectronic result of the dip coating technique, the ZnO:Al /p-Si heterojunction films were prepared by sol-gel dip coating technique. Various different techniques applied to characterized ZnO:Al thin films structural, optical, and electrical properties for analyzing doping concentration, pre-post annealing effects, and different annealing ambient conditions. Controlling doping concentration, pre and post annealing temperature, and ambient condition provided high quality crystal structure (hexagonal wurtzite structure), lowest grain boundaries and sheet resistivity (oxygen and vacuum ambient) and lowest lattice defects and good surface roughness (at 700°C and 800°C). Al doped ZnO thin films were deposited on p-Si substrate to preparing ZnO:Al/p-Si heterojunction films for optoelectronic applications. Al doped ZnO played a critical role in the heterojunction films as a transparent electrode layer. ZnO:Al films show high transparency (%85), low absorption in the visible-infrared region where electromagnetic waves and atoms displayed lowest interaction, large band gap (~3.37eV) which only absorb high frequency electromagnetic waves in the UV region, and high rectification ratio (good rectifying behavior) with p-Si. Additionally, ZnO:Al/p-Si heterojunction films show good compatible at interface and tune band bending.