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dc.contributor.authorAtasoyu, Mesut
dc.contributor.authorAltun, Mustafa
dc.contributor.authorOzoguz, Serdar
dc.identifier.citationM. Atasoyu, M. Altun, S. Ozoguz, Sensing schemes for STT-MRAMsstructured with high TMR in low RA MTJs, Microelectronics Journal (2019), doi:
dc.description.abstractIn this work, we investigated the sensing challenges of spin-transfer torque MRAMs structured with perpendicular magnetic tunnel junctions with a high tunneling magnetoresistance ratio in a low resistance-area product. To overcome the problems of reading this type of memory, we have proposed a voltage sensing amplifier topology and compared its performance to that of the current sensing amplifier in terms of power, speed, and bit error rate performance. We have verified that the proposed sensing scheme offers a substantial improvement in bit-error-rate performance. To enumerate the read operations of the proposed sensing scheme with the proposed cross-coupled capacitive feedback technique on the clamped circuity have successfully been performed a 2.5X reduction in average low power and a 13X increase in average reading speed compared with the previous works due to its device structure and the proposed circuit technique.tr_TR
dc.description.sponsorshipThis work is part of a project that has received funding from the European Union’s H2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement No 691178, and supported by the TUBITAK-Career project #113E760tr_TR
dc.relationMicroelectronics Journalen_US
dc.relationSynthesis and Performance Optimization of a Switching Nano-Crossbar Computer(NANOxCOMP)en_US
dc.titleSensing Schemes for STT-MRAMs structured with high TMR in low RA MTJstr_TR
dc.contributor.departmentElektronik ve Haberleşme Mühendisliğitr_TR
dc.contributor.departmentElectronics and Communication Engineeringtr_TR
Appears in Collections:Elektronik ve Haberleşme Mühendisliği

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