An X-Band SiGe driver amplifier

Abstract

In this paper, an integrated driver amplifier operating at X-Band (7-10 GHz) frequencies is presented. This driver amplifier is implemented in a 0.25-μm SiGe BiCMOS process. The two-stage push-pull amplifier uses on-chip transformers for the purpose of single-ended to differential signal conversion as well as input and output impedance matching. Operating with a 3.3 V supply voltage, the amplifier exhibits a measured output power of 13 dBm at 1-dB compression point with power-added efficiency of 12% and small signal gain of 21 dB.