I–V Characterization of the Irradiated ZnO:Al Thin Film on P-Si Wafers By Reactor Neutrons

Abstract

ZnO:Al/p-Si heterojunctions were fabricated by solgel dip coating technique onto p-type Si wafer substrates. Al-doped zinc oxide (ZnO:Al) thin film on p-Si wafer was irradiated by reactor neutrons at ITU TRIGA Mark-II nuclear reactor. Neutron irradiation was performed with neutron/gamma ratio at 1.44 × 104 (n cm−2 s−1 mR−1). The effect of neutron irradiation on the electrical characteristics of the ZnO:Al thin film was evaluated by means of current–voltage (I–V) characteristics for the unirradiated and the irradiated states. For this purpose, the changes of I–V characteristics of the unirradiated ZnO:Al thin films were compared with the irradiated ZnO:Al by reactor neutrons. The irradiated thin ZnO:Al film cell structure is appropriate for the usage of solar cell material which is promising energy material.