Growth and Characterization of Stoichiometric Cu2ZnSnS4 Crystal Using Vertical Bridgman Technique

Abstract

Stoichiometric Cu2ZnSnS4 (CZTS) single phase crystals are successfully grown in a single‐zone vertical furnace by Bridgman technique. X‐ray diffraction (XRD) and Raman spectroscopy measurements are employed to investigate the structural properties of the grown crystals, which verifies the formation of mono‐phase CZTS crystals with kesterite structure. The energy‐dispersive X‐ray analysis (EDS) indicates the growth of CZTS single phase crystals with a nearly stoichiometric chemical composition. The carrier concentration, mobility, and resistivity of the crystals are determined from Hall Effect measurements. At room temperature, the respective values are found to be 4.0 × 1015 cm−3, 1.0 cm2 Vs−1, and 1540 Ω cm. The activation energies for the acceptor levels are also determined using the temperature‐dependent hole concentration measurement. CuZn‐antisite originated acceptor level with activation energies of ≈121 meV is identified in a nearly stoichiometric kesterite structure.