Transport and storage properties of CrSi2/Si junctions made using the CAPVD technique

Abstract

Abstract p-CrSi 2 /n-crystSi and p-CrSi 2 /p-crystSi hetero junctions produced by cathodic arc physical vapor deposition were worked out by means of capacitance–voltage–temperature ( C – V – T ) and current–voltage–temperature ( I – V – T ) measurements to investigate storage and transport properties. Former measurement on p-CrSi 2 /n-crystSi structure confirmed an abrupt type junction together with a building voltage at the proximity of 0.7 V. Though a fairly well rectification ratio (10 3 at ±2 V) was realized by I – V measurement, it became deteriorated with the increase in ambient temperature. From temperature dependence of I – V variations, distinct conduction mechanisms were identified. In forward (reverse) direction trap assisted single-multistep tunneling recombination (generation) and space-charge limited current flow that corresponded to low and high bias voltage regions, respectively, were identified. Moreover, an activation energy ( E A ) determined from the slopes of I – V – T curves as 0.22 and 0.26 eV was interpreted as the energy position of a chromium–boron (Cr–B) complex-type point defect residing in n/p doped c-Si semiconductor in CrSi 2 /n–c-Si and CrSi 2 /p–c-Si junctions. The retrieved E A was in agreement with the recent DLTS measurement. Based on the experimental observations, schematic current path was built to interpret I – V / C – V behaviors. The model was successful in explaining the decrease in measured capacitance under large forward bias voltage reported for the first time by us for the present CrSi 2 /Si junctions.