A 7 GHz compact transimpedance amplifier TIA in CMOS 0.18 µm technology

Abstract

This paper describes a compact transimpedance amplifier (TIA). Based on the principle of negative impedance (NI) circuit, the proposed TIA provides wide bandwidth and low noise. The schematics and characteristics of NI circuit have been explained. The inductor behavior is synthesized by gyrator-C circuit. The TIA is implemented in 180 nm RF MOS transistors in a HV CMOS technology with 1.8 V supply voltage technology. It reaches ?3 dB bandwidth of 7 GHz and transimpedance gain of 54.3 dBΩ in the presence of a 50 fF photodiode capacitance. The simulated input referred noise current spectral density is $$5.9\;{\text{pA/}}\sqrt {\text{Hz}}$$5.9pA/Hz. The power consumption is 29 mW. The TIA occupies $$230\;\upmu {\text{m}} \times 45\;\upmu {\text{m}}$$230μm×45μm of area.