A Numerical Procedure to Determine the Power Intake/Delivery Capacity of a GaN RF Power Transistor over Broadband

Abstract

In this paper, a novel Real Frequency Line Segment Technique based numerical procedure is introduced to assess the gain-bandwidth limitations of the given source and load impedances, which in turn results in the ultimate RF-power intake/delivering performance of the amplifier. During the numerical performance assessments process, a robust tool called Virtual Gain Optimization is presented. Finally, a new definition called Power-Performance-Product is introduced to measure the quality of an active device. Examples are presented to assess the gain-bandwidth limitations of the given source and load pull impedances for the 45W-GaN power transistor of Wolfspeed CG2H40045 over 0.8-3.8 GHz bandwidth.