Compact low voltage high-Q CMOS active inductor suitable for RF applications

Abstract

A compact active inductor circuit is proposed. The circuit is based on the gyrator-C approach with both transconductance stages realized by MOS transistors in common-source configuration. The circuit has minimal number of transistors, is suitable for low voltage operation, offers a wide inductive band, high quality factor and low power dissipation. Simulation results are provided for a 0.13 μm CMOS process with 1.2 V supply voltage.