Publication: Enhancement of polycrystalline silicon solar cells efficiency using indium nitride particles
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Advisor
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IOP Publishing
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Abstract
In this work, we present a hybrid indium nitride particle/polycrystalline silicon solar cell based on 230 nm size indium nitride particles (InN-Ps) obtained through laser ablation. The solar cell performance measurements indicate that there is an absolute 1.5% increase (Δη) in the overall solar cell efficiency due to the presence of InN-Ps. Within the spectral range 300–1100 nm, improvements of up to 8.26% are observed in the external quantum efficiency (EQE) and increases of up to 8.75% are observed in the internal quantum efficiency (IQE) values of the corresponding solar cell. The enhancement in power performance is due to the down-shifting properties of the InN-Ps. The electrical measurements are supplemented by TEM, Raman, UV/ VIS and PL spectroscopy of the InN-Ps.
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Solar cells, INN, Electrical measurement, Indium nitride, Efficiency, PRESSURE, Indium, Solar cell performance, Nitrides, PL spectroscopy, Quantum efficiency, Solar cell efficiencies, external quantum efficiency, Silicon solar cells, External quantum efficiency, enhancement, Power performance, particles, Enhancement, Solar cell, Internal quantum efficiency, Elementary particles, indium nitride, Laser ablation, solar cell, Particles, NANOCRYSTALS, efficiency, Image enhancement, internal quantum efficiency, LASER-ABLATION, POROUS-SILICON