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Spintronic resistive memories: sensing schemes

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dc.date.accessioned2026-01-29T06:06:39Z
dc.date.issued2020-02-04
dc.description.abstractIn this chapter, we discuss the physical principles of spintronic devices and their sensing challenges and compare the different sensing schemes withing terms of the power and speed constraints. Moreover, the circuit operation and its benefits over other implementations of the proposed sensing scheme are clarified.
dc.description.urihttps://doi.org/10.1049/pbcs051e_ch12
dc.description.urihttps://dx.doi.org/10.1049/pbcs051e_ch12
dc.identifier.doi10.1049/pbcs051e_ch12
dc.identifier.openairedoi_dedup___::9f1f24584a198c66b881a2db9a4fa26d
dc.identifier.urihttps://hdl.handle.net/11527/68615
dc.language.isoeng
dc.publisherInstitution of Engineering and Technology
dc.titleSpintronic resistive memories: sensing schemes
dc.typeBook Part
dspace.entity.typePublication

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