Determination of ion dose and profiles in 74Ge and 120Sn implanted silicon layers by PIXE, NAA, RBS and SIMS

Abstract

Implanted 74Ge and 120Sn concentrations in silicon (Si) layers were investigated by particle induced X-ray emission (PIXE), instrumental neutron activation analysis (INAA), Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS). Slight differences were observed in the results obtained. It was shown that PIXE and INAA are as powerful as the traditional RBS and SIMS spectroscopy for the investigation of thin layered Si.