Please use this identifier to cite or link to this item: http://hdl.handle.net/11527/18014
Title: Sensing Schemes for STT-MRAMs structured with high TMR in low RA MTJs
Authors: Atasoyu, Mesut
Altun, Mustafa
Ozoguz, Serdar
Elektronik ve Haberleşme Mühendisliği
Electronics and Communication Engineering
Keywords: PMA
MTJ
STT-MRAM
Sensing
BER
Low-power
High-speed
Issue Date: 2019
Publisher: Elsevier
Citation: M. Atasoyu, M. Altun, S. Ozoguz, Sensing schemes for STT-MRAMsstructured with high TMR in low RA MTJs, Microelectronics Journal (2019), doi: https://doi.org/10.1016/j.mejo.2019.05.008.
Abstract: In this work, we investigated the sensing challenges of spin-transfer torque MRAMs structured with perpendicular magnetic tunnel junctions with a high tunneling magnetoresistance ratio in a low resistance-area product. To overcome the problems of reading this type of memory, we have proposed a voltage sensing amplifier topology and compared its performance to that of the current sensing amplifier in terms of power, speed, and bit error rate performance. We have verified that the proposed sensing scheme offers a substantial improvement in bit-error-rate performance. To enumerate the read operations of the proposed sensing scheme with the proposed cross-coupled capacitive feedback technique on the clamped circuity have successfully been performed a 2.5X reduction in average low power and a 13X increase in average reading speed compared with the previous works due to its device structure and the proposed circuit technique.
URI: http://hdl.handle.net/11527/18014
https://doi.org/10.1016/j.mejo.2019.05.008
ISSN: 0026-2692
Appears in Collections:Elektronik ve Haberleşme Mühendisliği

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